APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 1 ? 7 32 4 16 q4 cr3 3 13 r1 31 7 14 8 19 30 29 22 q1 18 cr2 23 15 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 100 v t c = 25c 139 i d continuous drain current t c = 80c 100 i dm pulsed drain current 430 a v gs gate - source voltage 30 v r dson drain - source on resistance 10 m p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 100 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj v dss = 100v r dson = 9m typ @ tj = 25c i d = 139a @ tc = 25c application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? power mos v ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant asymmetrical - bridge mosfet power module
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 100v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 80v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 69.5a 9 10 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 2 4 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 9875 c oss output capacitance 3940 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 1470 pf q g total gate charge 350 q gs gate ? source charge 60 q gd gate ? drain charge v gs = 10v v bus = 50v i d =139a 180 nc t d(on) turn-on delay time 35 t r rise time 70 t d(off) turn-off delay time 95 t f fall time inductive switching @ 125c v gs = 15v v bus = 66v i d = 139a r g = 5 ? 125 ns e on turn-on switching energy 552 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 66v i d = 139a, r g = 5 ? 604 j e on turn-on switching energy 608 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 66v i d = 139a, r g = 5 ? 641 j diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 250 i rm maximum reverse leakage current v r =200v t j = 125c 500 a i f dc forward current tc = 80c 100 a i f = 100a 1 i f = 200a 1.4 v f diode forward voltage i f = 100a t j = 125c 0.9 v t j = 25c 60 t rr reverse recovery time t j = 125c 110 ns t j = 25c 200 q rr reverse recovery charge i f = 100a v r = 133v di/dt =200a/s t j = 125c 840 nc
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 3 ? 7 thermal and package characteristics symbol characteristic min typ max unit mosfet 0.32 r thjc junction to case thermal resistance diode 0.55 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 4 ? 7 typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impeda nce, junction to case vs pulse duration 6v 7v 8v 0 100 200 300 400 500 600 0 4 8 12 16 20 24 28 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =15v, 10v & 9v transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 0 50 100 150 200 i d , drain current (a) r ds(on) drain to source on resistance normalized to v gs =10v @ 69.5a 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 5 ? 7 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) rds(on), drain to source on resistance (normalized) v gs =10v i d = 69.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 v ds , drain to source voltage (v) i d , drain current (a) single pulse t j =150c t c =25c limited by r dson ciss crss coss 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =20v v ds =50v v ds =80v 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =139a t j =25c
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 6 ? 7 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 120 0 50 100 150 200 250 i d , drain current (a) t d(on) and t d(off) (ns) v ds =66v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 i d , drain current (a) t r and t f (ns) v ds =66v r g =5 ? t j =125c l=100h switching energy vs current e on e on e off 0 0.5 1 1.5 0 50 100 150 200 250 i d , drain current (a) e on and e off (mj) v ds =66v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 0 102030405060 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =66v i d =139a t j =125c l=100h hard switching zvs zcs 0 50 100 150 200 250 300 25 50 75 100 125 150 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =66v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage
APTM10DHM09T3G APTM10DHM09T3G ? rev 0 august, 2009 www.microsemi.com 7 ? 7 typical diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 50 100 150 200 0.0 0.5 1.0 1.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 50 a 100 a 130 a 0 10 20 30 40 50 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =133v trr vs. current rate of charge 50 a 100 a 130 a 40 60 80 100 120 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =133v q rr vs. current rate charge 50 a 100 a 130 a 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =133v capacitance vs. reverse voltage 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 25 50 75 100 125 150 25 50 75 100 125 150 case temperature (c) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =150c microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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